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Metalized Aluminum Nitride Substrate
High-Performance Metalized AlN Ceramic Substrate for HV/HP Devices High-Performance Metalized AlN Ceramic Substrate for HV/HP Devices

High-Performance Metalized AlN Ceramic Substrate for HV/HP Devices

The metalized aluminum nitride ceramic substrate is a versatile packaging solution for high-voltage, high-power devices in EVs, rail transit, smart grids, aerospace.
  • item no. :

    CS-AIN-LJ1001
  • Material : Aluminum Nitride

  • description

Properties of Metalized Aluminum Nitride Substrate


  1. Thermal Matching with Silicon Chips:
    • The thermal expansion coefficient of our metalized aluminum nitride ceramic substrate closely matches that of silicon chips. This ensures excellent thermal matching, eliminating the need for a transition layer. By reducing material and processing costs, our substrate offers a highly reliable solution for packaged components, aligning with the needs of modern electronics manufacturing in the EU and USA.
  2. Superior Thermal Conductivity & High Current Capacity:
    • Our metalized aluminum nitride ceramic substrate boasts exceptional thermal conductivity and a large current carrying capacity. This allows for the creation of highly compact chip packages, significantly enhancing power density. With these advantages, the reliability of both systems and devices is vastly improved, making it an ideal choice for high-performance applications sought after by European and American engineers.



Applications of Metalized Aluminum Nitride Substrate


  1. Versatile Packaging Solution for High-Voltage, High-Power Devices:
    • Our premium metalized aluminum nitride ceramic substrate is designed specifically for use as a packaging substrate in a wide range of high-voltage, high-power devices. This includes power modules, high-frequency switching power supplies, relays, communication modules, and LED modules, catering to the diverse needs of the electronics industry in Europe and the USA.
  2. Ideal Match for Third-Generation Semiconductor SiC Power Modules:
    • Our substrate is particularly well-suited for packaging third-generation semiconductor SiC power modules, which are rapidly gaining adoption in electrical vehicles, rail transit, smart grids, aerospace, and other cutting-edge fields. This alignment ensures optimized performance and reliability, making it a go-to choice for developers and manufacturers in these high-growth sectors.
  3. Broad Industry Applications:
    • With its exceptional properties, our metalized aluminum nitride ceramic substrate is widely used in sectors where reliability, efficiency, and durability are paramount. From clean energy solutions to advanced communication systems, our substrate offers a robust platform for high-performance electronics, aligning with the rigorous standards and demands of European and American markets.




Cutomized Design of Metalized Aluminum Nitride Substrate

Please provide drawing and parameter requirements.





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