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Metalized Silicon Nitride Substrate
AMB Metalized Si3N4 Ceramic Substrate for High-Power Device Packaging AMB Metalized Si3N4 Ceramic Substrate for High-Power Device Packaging

AMB Metalized Si3N4 Ceramic Substrate for High-Power Device Packaging

The AMB silicon nitride substrate, offers electrical function, ideal for packaging high-voltage, high-power devices used in EVs, rail transit, smart grids, and aerospace.
  • item no. :

    CS-SIN-FT1001
  • Material : Si3N4

  • description

Properties of Metalized Silicon Nitride Substrate


  1. Excellent Thermal Matching:
    • The thermal expansion coefficient of our AMB Silicon Nitride Substrate is closely aligned with that of silicon chips, ensuring superior thermal matching. This feature eliminates the need for a transition layer, thereby reducing material and processing costs significantly. With this efficient thermal management, the reliability of packaged components is enhanced, aligning perfectly with the demands for durability in high-performance applications.
  2. Superior Thermal Conductivity & High Current Carrying Capacity:
    • The AMB Silicon Nitride Substrate boasts exceptional thermal conductivity and a substantial current carrying capacity. This combination allows for the creation of highly compact chip packages, dramatically increasing power density. Furthermore, the enhanced thermal dissipation and electrical performance contribute to improved system and device reliability, making it an ideal choice for cutting-edge electronic devices sought after in the European and North American markets.



Applications of Metalized Silicon Nitride Substrate


  1. Versatile Application in High-Voltage, High-Power Devices:
    • The AMB Silicon Nitride Substrate is a versatile packaging substrate tailored for high-voltage, high-power devices. It serves as the foundation for various components, including power modules, high-frequency switching power supplies, relays, communication modules, and LED modules. This broad applicability ensures that it meets the diverse needs of modern electronics and electrical systems.
  2. Ideal Pairing with Third-Generation Semiconductor SiC Power Modules:
    • Our AMB Silicon Nitride Substrate is particularly well-suited for packaging third-generation semiconductor SiC power modules. SiC (Silicon Carbide) power modules are renowned for their exceptional performance in high-voltage, high-temperature environments, making them ideal for applications in electrical vehicles, rail transit, smart grids, aerospace, and other cutting-edge fields. By pairing with SiC power modules, the AMB Silicon Nitride Substrate further enhances the efficiency, reliability, and durability of these critical components, aligning perfectly with the rigorous standards demanded by European and North American markets.


Size Chart of Metalized Silicon Nitride Substrate

Please provide drawing and parameter requirements.


AMB Silicon Nitride Substrate
Item No. L*W Thickness of Ceramic Thickness of Metal
(mm) (mm) (mm)
CS-SIN-FT1001 10*10~127*178 0.25 0.127, 0.2, 0.25, 0.3, 0.4, 0.5, 0.8
CS-SIN-FT1002 0.32
CS-SIN-FT1003 0.38
CS-SIN-FT1004 0.63
CS-SIN-FT1005 1
CS-SIN-FT1006 others



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