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Silicon Nitride Semiconductor Substrate
High-Purity Si3N4 Ceramic Semiconductor Substrate for Power Devices & ICs High-Purity Si3N4 Ceramic Semiconductor Substrate for Power Devices & ICs

High-Purity Si3N4 Ceramic Semiconductor Substrate for Power Devices & ICs

The Si3N4 ceramic substrate, a new-gen semiconductor material made of high-purity powder, is widely used in power components, inverters, modules, & multi-device ICs.
  • item no. :

    CS-DHG-JB001
  • Material : Si3N4

  • description

Properties of Si3N4 Ceramic Substrate


  1. Exceptional High-Temperature Resistance: The Silicon Nitride Substrate boasts an impressive maximum use temperature of up to 1300℃, making it ideal for applications requiring extreme thermal stability.

  2. Superior Thermal Conductivity & Low Thermal Expansion: With a thermal conductivity of up to 95W/(℃m) and a minimal thermal expansion coefficient of just 310-6/℃, this substrate exhibits exceptional thermal shock resistance, ensuring stability and durability in temperature-fluctuating environments.

  3. Robust Mechanical Strength & Impact Resistance: Characterized by high mechanical strength and remarkable toughness, the Silicon Nitride Substrate withstands severe mechanical impacts without compromising performance, ensuring reliability in demanding applications.

  4. Excellent Electrical Insulation Properties: Boasting great electric insulation, a high breakdown voltage, and substantial current carrying capacity, this substrate is an optimal choice for electrical and electronic components requiring superior dielectric strength.

  5. Outstanding Chemical Resistance: Capable of resisting erosion from a wide range of acids, alkalis, and other chemical substances, the Silicon Nitride Substrate demonstrates exceptional corrosion resistance, making it suitable for harsh and aggressive chemical environments.


Applications of Si3N4 Ceramic Substrate


  1. Electronic Industry Applications

    • High-Reliability Components: The Si3N4 Ceramic Substrate boasts high insulation performance and outstanding high-temperature resistance, making it ideal for manufacturing electronic components such as capacitors, resistors, and magnetic components that require high reliability and performance.
    • High-Speed Communication: Its ability to withstand high temperatures and maintain stable electrical properties makes it suitable for use in the medium layer of high-speed communication equipment, ensuring the smooth and stable transmission of high-frequency signals.
  2. Photoelectric Industry

    • High-Power LEDs: The excellent thermal conductivity and mechanical strength of Si3N4 Ceramic Substrate are crucial for the manufacture of high-power LEDs, ensuring their stability and longevity.
    • Solar Panels: This substrate can also be used as a support material for solar panels, enhancing their mechanical strength and chemical resistance, thus extending their lifespan and efficiency.
  3. Electrical Industry

    • High-Power Electrical Components: The Si3N4 Ceramic Substrate's combination of excellent insulation, heat dissipation, and mechanical strength makes it perfect for manufacturing various high-power electrical components such as power modules and heating modules. These components, in turn, ensure the reliability and longevity of the entire electrical system.


Size Chart of Si3N4 Ceramic Substrate

Please provide drawing and parameter requirements for customization.


Si3N4 Substrate Square and Rectangular
Item No. Length
(mm)
Width
(mm)
Thickness
(mm)
CS-DHG-JB001 10 10 0.32
CS-DHG-JB002 20 20 0.32
CS-DHG-JB003 30 30 4.0 
CS-DHG-JB004 40 40 0.5
CS-DHG-JB005 50 50 0.32
CS-DHG-JB006 50 50 0.635
CS-DHG-JB007 50 50 1.0 
CS-DHG-JB008 50 50 2.0 
CS-DHG-JB009 50 50 4.0 
CS-DHG-JB010 50 50 9.0 
CS-DHG-JB011 100 100 0.3 
CS-DHG-JB012 100 100 0.5 
CS-DHG-JB013 100 100 0.6 
CS-DHG-JB014 100 100 1.0 
CS-DHG-JB015 100 100 4.0 
CS-DHG-JB016 100 100 9.0 
CS-DHG-JB017 114 114 0.3 
CS-DHG-JB018 114 114 0.5 
CS-DHG-JB019 114 114 0.6 
CS-DHG-JB020 114 114 1.0 
CS-DHG-JB021 190 138 0.3 
CS-DHG-JB022 190 138 0.5 
CS-DHG-JB023 190 138 0.6 
CS-DHG-JB024 190 138 1.0 


Si3N4 Substrate Round
Item No. Diameter
(mm)
Thickness
(mm)
CS-DHG-JB025 5 0.25
CS-DHG-JB026 5 0.32
CS-DHG-JB027 5 0.625
CS-DHG-JB028 5 1
CS-DHG-JB029 10 0.25
CS-DHG-JB030 10 0.32
CS-DHG-JB031 10 0.625
CS-DHG-JB032 10 1
CS-DHG-JB033 20 0.25
CS-DHG-JB034 20 0.32
CS-DHG-JB035 20 0.625
CS-DHG-JB036 20 1
CS-DHG-JB037 40 0.25
CS-DHG-JB038 40 0.32
CS-DHG-JB039 40 0.625
CS-DHG-JB040 40 1
CS-DHG-JB041 50 0.25
CS-DHG-JB042 50 0.32
CS-DHG-JB043 50 0.625
CS-DHG-JB044 50 1
CS-DHG-JB045 100 0.32
CS-DHG-JB046 100 1
CS-DHG-JB047 100 2
CS-DHG-JB048 150 0.32
CS-DHG-JB049 150 1
CS-DHG-JB050 150 2
CS-DHG-JB051 150 20




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