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Sapphire Substrate
Sapphire Substrate C-Plane Wafers for III-V Nitride Epitaxy in Semiconductor Chip Manufacturing Sapphire Substrate C-Plane Wafers for III-V Nitride Epitaxy in Semiconductor Chip Manufacturing

Sapphire Substrate C-Plane Wafers for III-V Nitride Epitaxy in Semiconductor Chip Manufacturing

The sapphire substrate, resistant to high temperature, corrosion, and with low lattice mismatch, is ideal for III-V nitride epitaxial wafers like GaN in semiconductor chip manufacturing.
  • item no. :

    CS-BS-JP1001
  • Material : Sapphire

  • description

Properties of Sapphire Substrate


  • Resistant to High Temperatures & Corrosion: Engineered to withstand extreme temperatures and corrosive environments, our sapphire substrate maintains its integrity and performance, even under the most challenging conditions.

  • Excellent Wear Resistance: With exceptional wear resistance, this substrate ensures long-lasting durability and reduces the need for frequent replacements, lowering your overall maintenance costs.

  • Adaptable to Harsh Working Environments: Whether you're working in high-temperature furnaces, chemical processing plants, or other demanding settings, our sapphire substrate is designed to thrive in harsh environments, providing reliable performance and consistent results.

  • Low Lattice Mismatch Rate: Featuring a low lattice mismatch rate, this substrate ensures optimal compatibility with various materials and devices, enhancing overall performance stability and reliability.

  • Stable Performance: Known for its consistent and stable performance, our sapphire substrate is the perfect choice for applications requiring precision and reliability, ensuring your operations run smoothly and efficiently.



Applications of Sapphire Substrate


  • Ideal for III-V Nitride Epitaxial Wafers: Our sapphire substrate serves as the perfect foundation for the preparation of III-V nitride epitaxial wafers, such as GaN. This makes it an ideal choice for chip manufacturing in the semiconductor industry, ensuring high-quality and reliable results.

  • Semiconductor Industry Applications: Perfectly suited for the semiconductor industry, our substrate supports the manufacturing of chips used in a wide range of applications, including LEDs, lasers, and high-power electronics.

  • Exceptional Material Properties: Sapphire is renowned for its exceptional hardness, thermal stability, and chemical resistance. These properties make our substrate highly durable and capable of withstanding the harsh conditions of semiconductor manufacturing processes.

  • Precision and Consistency: Our sapphire substrate offers precision and consistency in terms of thickness, flatness, and surface quality. This ensures that the epitaxial wafers produced are of the highest quality, meeting the stringent standards of the semiconductor industry.

  • Customizable Options: To cater to the diverse needs of our clients, we offer customizable options for our sapphire substrate. Whether you require a specific size, thickness, or surface treatment, we can tailor our substrate to meet your exact requirements.



Size Chart of Sapphire Substrate

Please provide drawing and parameter requirements for customization.


C-Plane(0001) Sapphire Substrate
Item NO. Inch Diameter(mm) Thicknessμm ttv bow warp Purity
CS-BS-JP1001 1 Inch 25.4±0.1 430±25 ttv < 5 μm
bow < 5 μm
warp < 5 μm
99.999%
CS-BS-JP1002 2 Inch 50.8±0.1 430±25 ttv < 10 μm
bow < 10 μm
warp < 10 μm
99.999%
CS-BS-JP1003 3 Inch 76.2±0.1 500±25 ttv < 15 μm
bow < 15 μm
warp < 15 μm
99.999%
CS-BS-JP1004 4 Inch 100±0.1 650±25 ttv < 20 μm
bow < 20 μm
warp < 20 μm
99.999%
CS-BS-JP1005 5 Inch 125±0.1 650±25 ttv < 20 μm
bow < 20 μm
warp < 20 μm
99.999%
CS-BS-JP1006 6 Inch 150±0.2 1300±25 ttv < 25 μm
bow < 25 μm
warp < 25 μm
99.999%
CS-BS-JP1007 8 Inch 200±0.2 1300±25 ttv< 30 μm
bow< 30 μm
warp< 30 μm
99.999%


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