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High-Purity SiC Tray for Semiconductor RTA PVD ICP CMP Processes High-Purity SiC Tray for Semiconductor RTA PVD ICP CMP Processes

High-Purity SiC Tray for Semiconductor RTA PVD ICP CMP Processes

The high-purity silicon carbide tray, formed through sintering, serves as a durable carrying device in semiconductor manufacturing processes like RTA, PVD, ICP, and CMP.
  • item no. :

    CS-THG-CZ1001
  • Material : SiC

  • description

Properties of SiC Silicon Carbide Tray


  1. Superior Thermal Management:
    • The SiC Tray boasts excellent thermal conductivity, ensuring efficient heat transfer during the semiconductor manufacturing process.
    • With a low thermal expansion coefficient, it maintains dimensional stability, reducing the risk of warping or cracking under thermal stress.
    • It exhibits outstanding thermal shock resistance, allowing it to withstand rapid temperature changes without damage.
  2. High Temperature & Plasma Durability:
    • Designed for extreme temperature resistance, the SiC Tray can endure the high temperatures encountered in semiconductor processing environments.
    • Its plasma impact resistance makes it ideal for applications involving plasma etching or other plasma-based processes, ensuring longevity and reliability.
  3. Chemical Resistance:
    • The tray is resistant to a wide range of strong acids, alkalis, and chemical reagents, providing robust protection against corrosive materials commonly used in semiconductor manufacturing.
    • This chemical inertness ensures consistent performance and extended service life, reducing the need for frequent replacements.
  4. Exceptional Mechanical Properties:
    • Characterized by high hardness and high strength, the SiC Tray offers exceptional durability and load-bearing capacity.
    • Its good wear resistance ensures that the tray maintains a smooth, precise surface over time, minimizing the risk of particle contamination in sensitive manufacturing processes.


Applications of SiC Silicon Carbide Tray



  • The SiC Tray serves as a critical carrying plate in the manufacturing processes of semiconductors, including LED production. Its unique combination of thermal, chemical, and mechanical properties makes it an indispensable component for ensuring the precision, reliability, and efficiency of modern semiconductor manufacturing operations.




Size Chart of SiC Silicon Carbide Tray

Please provide drawing and parameter requirements for customization.


Silicon Carbide Tray SiC PVD Tray
Item NO. Diameter
(mm)
Thickness
(mm)
SiC's Purity
(%)
CS-THG-CZ1001 230 3 99
CS-THG-CZ1002 300 1.4 99
CS-THG-CZ1003 300 3 99
CS-THG-CZ1004 330 1.4 99
CS-THG-CZ1005 330 3 99


Silicon Carbide Tray SiC ICP Tray
Item NO. Diameter
(mm)
Thickness
(mm)
SiC's Purity
(%)
CS-THG-CZ2001 300 3 99
CS-THG-CZ2002 300 4.4 99
CS-THG-CZ2003 330 4.4 99
CS-THG-CZ2004 330 3 99
CS-THG-CZ2005 380 4.4 99
CS-THG-CZ2006 380 3 99


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